SMBJ130A
vs
SMBJ130A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
BYTESONIC ELECTRONICS CO LTD
SILICON STANDARD CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
159 V
159 V
Breakdown Voltage-Min
144 V
144 V
Breakdown Voltage-Nom
151.5 V
Clamping Voltage-Max
209 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
1.2 V
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-202
Rep Pk Reverse Voltage-Max
130 V
130 V
Reverse Current-Max
5 µA
Reverse Test Voltage
130 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
SMB, 2 PIN
JESD-609 Code
e3
Moisture Sensitivity Level
3
Terminal Finish
MATTE TIN
Compare SMBJ130A with alternatives
Compare SMBJ130A with alternatives