SMBJ12HE3/52
vs
MXSMBJ12A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
16.3 V
14.7 V
Breakdown Voltage-Min
13.3 V
13.3 V
Breakdown Voltage-Nom
14.8 V
Clamping Voltage-Max
22 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Package Description
SMBJ, 2 PIN
Factory Lead Time
40 Weeks
Diode Element Material
SILICON
JESD-609 Code
e0
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Power Dissipation-Max
1.38 W
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
Terminal Finish
Tin/Lead (Sn/Pb)
Compare SMBJ12HE3/52 with alternatives
Compare MXSMBJ12A with alternatives