SMBJ12CA
vs
SMBJ12C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MDE SEMICONDUCTOR INC
SEMTECH CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
14.7 V
Breakdown Voltage-Min
13.3 V
13.3 V
Breakdown Voltage-Nom
14 V
14.8 V
Clamping Voltage-Max
19.9 V
22 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max
12 V
12 V
Reverse Current-Max
1 µA
5 µA
Reverse Test Voltage
12 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
6
JESD-609 Code
e0
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Compare SMBJ12CA with alternatives
Compare SMBJ12C with alternatives