SMBJ12C
vs
SMBJ12C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
MERITEK ELECTRONICS CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
8.54
Breakdown Voltage-Nom
14.8 V
14.8 V
Clamping Voltage-Max
22 V
22 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
3
Rohs Code
Package Description
SMB, 2 PIN
Compliance Temperature Grade
Military: -55C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a)
Candidate List Date
2017-07-07
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
16.3 V
Breakdown Voltage-Min
13.3 V
Configuration
SINGLE
Diode Element Material
SILICON
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Reference Standard
MIL-STD-750
Reverse Current-Max
1 µA
Reverse Test Voltage
12 V
Technology
AVALANCHE
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ12C with alternatives
Compare SMBJ12C with alternatives