SMBJ12A-T3
vs
P6SMB13AT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MOTOROLA INC
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
14.7 V
13.7 V
Breakdown Voltage-Min
13.3 V
12.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
12 V
11.1 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
4
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
13 V
Clamping Voltage-Max
18.2 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Terminal Finish
Tin/Lead (Sn/Pb)
Compare SMBJ12A-T3 with alternatives
Compare P6SMB13AT3 with alternatives