SMBJ120CAHR4G
vs
SMBJ120C/TR
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
MICROSEMI CORP
|
Package Description |
SMB, 2 PIN
|
PLASTIC PACKAGE-2
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
TR, 7 INCH; 750
|
Breakdown Voltage-Max |
147 V
|
163 V
|
Breakdown Voltage-Min |
133 V
|
133 V
|
Breakdown Voltage-Nom |
140 V
|
148 V
|
Clamping Voltage-Max |
193 V
|
214 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code |
DO-214AA
|
DO-214AA
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-65 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
235
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
1.38 W
|
Reference Standard |
AEC-Q101
|
|
Rep Pk Reverse Voltage-Max |
120 V
|
120 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
20
|
Base Number Matches |
1
|
1
|
Date Of Intro |
|
1995-01-01
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare SMBJ120CAHR4G with alternatives
Compare SMBJ120C/TR with alternatives