SMBJ12.TF vs P6SMBJ12 feature comparison

SMBJ12.TF Semtech Corporation

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P6SMBJ12 Hitano Enterprise Corp

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMTECH CORP HITANO ENTERPRISE CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 13.3 V 13.3 V
Clamping Voltage-Max 22 V 22 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 12
Rohs Code Yes
Package Description SMB, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 16.3 V
Breakdown Voltage-Nom 14.8 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard IEC-1000-4-2, 4-4
Rep Pk Reverse Voltage-Max 12 V
Reverse Test Voltage 12 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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