SMBJ12 vs SMBJ12AR4 feature comparison

SMBJ12 Galaxy Semi-Conductor Co Ltd

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SMBJ12AR4 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-J2 SMB, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 16.3 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14.8 V 14 V
Clamping Voltage-Max 22 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 47 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMBJ12AR4 with alternatives