SMBJ12 vs SMBJ12A feature comparison

SMBJ12 Bytesonic Corporation

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SMBJ12A Galaxy Microelectronics

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Part Life Cycle Code Active Active
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 16.3 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14.8 V 14 V
Clamping Voltage-Max 22 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-202 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 5 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 8 1
Rohs Code Yes
Part Package Code SMB
Package Description SMB, 2 PIN
Peak Reflow Temperature (Cel) 260

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