SMBJ11CATR
vs
SMBJ11CTR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2018-08-03
Additional Feature
EXCELLENT CLAMPING CAPABILITY
TR, 7 INCH; 750
Breakdown Voltage-Max
13.5 V
14.9 V
Breakdown Voltage-Min
12.2 V
12.2 V
Breakdown Voltage-Nom
12.85 V
13.55 V
Clamping Voltage-Max
18.2 V
20.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
235
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
MIL-STD-750
Rep Pk Reverse Voltage-Max
11 V
11 V
Reverse Current-Max
5 µA
Reverse Test Voltage
11 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
20
Base Number Matches
2
1
Part Package Code
DO-214AA
Package Description
R-PDSO-C2
Pin Count
2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Power Dissipation-Max
1.38 W
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
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