SMBJ11CA vs SMBJ11CA feature comparison

SMBJ11CA Galaxy Microelectronics

Buy Now Datasheet

SMBJ11CA Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMB
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code unknown not_compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.5 V 13.5 V
Breakdown Voltage-Min 12.2 V 12.2 V
Breakdown Voltage-Nom 12.85 V 12.85 V
Clamping Voltage-Max 18.2 V 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 14
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Reverse Current-Max 1 µA
Reverse Test Voltage 11 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ11CA with alternatives

Compare SMBJ11CA with alternatives