SMBJ11A-13 vs SMBJ11AHM4G feature comparison

SMBJ11A-13 Diodes Incorporated

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SMBJ11AHM4G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Diodes Incorporated
Breakdown Voltage-Max 14.4 V 13.5 V
Breakdown Voltage-Min 12.2 V 12.2 V
Breakdown Voltage-Nom 13.3 V
Clamping Voltage-Max 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-214AA
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ11A-13 with alternatives

Compare SMBJ11AHM4G with alternatives