SMBJ11A/TR13 vs SMBJ11A-T3 feature comparison

SMBJ11A/TR13 Microsemi Corporation

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SMBJ11A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-J2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 13.5 V 13.48 V
Breakdown Voltage-Min 12.2 V 12.2 V
Breakdown Voltage-Nom 12.85 V
Clamping Voltage-Max 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

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