SMBJ110TRE3
vs
SMBJ110AHR4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
135.5 V
128.5 V
Clamping Voltage-Max
196 V
177 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
110 V
110 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
1
1
Package Description
SMB, 2 PIN
Breakdown Voltage-Max
135 V
Breakdown Voltage-Min
122 V
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Power Dissipation-Max
3 W
Reference Standard
AEC-Q101
Technology
AVALANCHE
Compare SMBJ110TRE3 with alternatives
Compare SMBJ110AHR4G with alternatives