SMBJ110HE3/5B vs SMBJ110A-AT feature comparison

SMBJ110HE3/5B Vishay Intertechnologies

Buy Now Datasheet

SMBJ110A-AT YAGEO Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC YAGEO CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 135.5 V 128.5 V
Clamping Voltage-Max 196 V 177 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Base Number Matches 2 3
Date Of Intro 2018-11-21
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 135 V
Breakdown Voltage-Min 122 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reference Standard AEC-Q101; UL CERTIFIED
Reverse Current-Max 1 µA
Reverse Test Voltage 110 V
Technology AVALANCHE
Terminal Finish TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

Compare SMBJ110HE3/5B with alternatives

Compare SMBJ110A-AT with alternatives