SMBJ110D-M3/I vs SMBJ110TRE3 feature comparison

SMBJ110D-M3/I Vishay Intertechnologies

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SMBJ110TRE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Package Description SMBJ, 2 PIN
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 133 V
Breakdown Voltage-Min 124 V
Breakdown Voltage-Nom 128.5 V 135.5 V
Clamping Voltage-Max 174 V 196 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 10
Base Number Matches 1 1

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Compare SMBJ110TRE3 with alternatives