SMBJ110CA-AT vs SMBJ110CAM4 feature comparison

SMBJ110CA-AT YAGEO Corporation

Buy Now Datasheet

SMBJ110CAM4 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer YAGEO CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2018-11-21
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 135 V 135 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 128.5 V 128.5 V
Clamping Voltage-Max 177 V 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Reference Standard AEC-Q101; UL CERTIFIED
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Current-Max 1 µA
Reverse Test Voltage 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Base Number Matches 3 2
Rohs Code Yes
Package Description R-PDSO-C2

Compare SMBJ110CA-AT with alternatives

Compare SMBJ110CAM4 with alternatives