SMBJ110A-13-F vs P6SMB130AHR5G feature comparison

SMBJ110A-13-F Diodes Incorporated

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P6SMB130AHR5G Taiwan Semiconductor

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMB, 2 PIN SMB, 2 PIN
Pin Count 2
Manufacturer Package Code SMB
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Diodes Incorporated
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 140 V 137 V
Breakdown Voltage-Min 122 V 124 V
Breakdown Voltage-Nom 131 V 130 V
Clamping Voltage-Max 177 V 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 111 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
JEDEC-95 Code DO-214AA
Reference Standard AEC-Q101

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Compare P6SMB130AHR5G with alternatives