SMBJ110 vs SMBJ110HR4G feature comparison

SMBJ110 ProTek Devices

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SMBJ110HR4G Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer PROTEK DEVICES TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min 122 V 122 V
Clamping Voltage-Max 196 V 196 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 16 1
Rohs Code Yes
Breakdown Voltage-Max 149 V
Breakdown Voltage-Nom 135.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ110 with alternatives

Compare SMBJ110HR4G with alternatives