SMBJ110
vs
SMBJ110AHM3/I
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL INSTRUMENT CORP
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
154.5 V
135 V
Breakdown Voltage-Min
122 V
122 V
Clamping Voltage-Max
196 V
177 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Current-Max
5 µA
1 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Rohs Code
Package Description
SMB, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
128.5 V
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101; UL RECOGNIZED
Reverse Test Voltage
110 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ110 with alternatives
Compare SMBJ110AHM3/I with alternatives