SMBJ110 vs SMBJ110A-13-F feature comparison

SMBJ110 Galaxy Microelectronics

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SMBJ110A-13-F Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DIODES INC
Part Package Code SMB
Package Description R-PDSO-J2 SMB, 2 PIN
Reach Compliance Code unknown not_compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 149 V 140 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 135.5 V 131 V
Clamping Voltage-Max 196 V 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Pbfree Code No
Pin Count 2
Manufacturer Package Code SMB
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Diodes Incorporated
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare SMBJ110 with alternatives

Compare SMBJ110A-13-F with alternatives