SMBJ110 vs SMBJ110AHR5G feature comparison

SMBJ110 FCI Semiconductor

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SMBJ110AHR5G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer FIRST COMPONENTS INTERNATIONAL TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 136 V 128.5 V
Clamping Voltage-Max 196 V 177 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Rohs Code Yes
Package Description SMB, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 135 V
Breakdown Voltage-Min 122 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Technology AVALANCHE
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ110 with alternatives

Compare SMBJ110AHR5G with alternatives