SMBJ110
vs
SMBJ110
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
BYTESONIC ELECTRONICS CO LTD
TRANSPRO ELECTRONICS CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
149 V
Breakdown Voltage-Min
122 V
Breakdown Voltage-Nom
135.5 V
136 V
Clamping Voltage-Max
196 V
196 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
1.2 V
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-STD-202
Rep Pk Reverse Voltage-Max
110 V
110 V
Reverse Current-Max
5 µA
Reverse Test Voltage
110 V
Surface Mount
YES
YES
Technology
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
4
Rohs Code
JESD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Compare SMBJ110 with alternatives
Compare SMBJ110 with alternatives