SMBJ10T3 vs SMBJ10E3TR feature comparison

SMBJ10T3 Crydom Inc

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SMBJ10E3TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CRYDOM INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE TR, 7 INCH; 750
Breakdown Voltage-Max 14.1 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.6 V 12.35 V
Clamping Voltage-Max 18.8 V 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 1.38 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 11
Rohs Code Yes
Part Package Code DO-214AA
Pin Count 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ10T3 with alternatives

Compare SMBJ10E3TR with alternatives