SMBJ10HE3/52 vs SMBJ10TR feature comparison

SMBJ10HE3/52 Vishay Intertechnologies

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SMBJ10TR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 12.35 V 12.35 V
Clamping Voltage-Max 18.8 V 18.8 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Base Number Matches 2 1
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Additional Feature TR, 7 INCH; 750
Breakdown Voltage-Max 13.6 V
Breakdown Voltage-Min 11.1 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20

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