SMBJ10CAE3TR vs SMBJ10CHR4G feature comparison

SMBJ10CAE3TR Microsemi Corporation

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SMBJ10CHR4G Taiwan Semiconductor

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Yes Yes
Obsolete Obsolete
MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
DO-214AA
R-PDSO-C2 R-PDSO-C2
2
unknown not_compliant
EAR99 EAR99
8541.10.00.50 8541.10.00.50
TR, 7 INCH; 750 EXCELLENT CLAMPING CAPABILITY
12.3 V 13.6 V
11.1 V 11.1 V
11.7 V 12.35 V
17 V 18.8 V
SINGLE SINGLE
SILICON SILICON
TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
DO-214AA DO-214AA
R-PDSO-C2 R-PDSO-C2
e3 e3
1 1
600 W 600 W
1 1
2 2
150 °C 150 °C
-65 °C -55 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
260 260
BIDIRECTIONAL BIDIRECTIONAL
1.38 W 3 W
Not Qualified
10 V 10 V
YES YES
AVALANCHE AVALANCHE
MATTE TIN MATTE TIN
C BEND C BEND
DUAL DUAL
10 30
1 1
AEC-Q101

Compare SMBJ10CAE3TR with alternatives

Compare SMBJ10CHR4G with alternatives