SMBJ10CA
vs
SMBJ10CA-E3/5B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-J2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max
12.3 V
12.3 V
Breakdown Voltage-Min
11.1 V
11.1 V
Breakdown Voltage-Nom
11.7 V
11.7 V
Clamping Voltage-Max
17 V
17 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
62
2
Pbfree Code
Part Package Code
DO-214AA
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reverse Current-Max
10 µA
Reverse Test Voltage
10 V
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ10CA with alternatives
Compare SMBJ10CA-E3/5B with alternatives