SMBJ10C.TF
vs
P6SMBJ10C-AU_R1_000A1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMTECH CORP
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
11.1 V
11.1 V
Clamping Voltage-Max
18.8 V
18.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Package Description
R-PDSO-C2
Breakdown Voltage-Max
14.1 V
Breakdown Voltage-Nom
12.6 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
10 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SMBJ10C.TF with alternatives
Compare P6SMBJ10C-AU_R1_000A1 with alternatives