SMBJ10C
vs
P6SMB12CHR4
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
TAIWAN SEMICONDUCTOR CO LTD
Part Package Code
DO-214AA
Package Description
R-PDSO-J2
R-PDSO-C2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
13.6 V
13.2 V
Breakdown Voltage-Min
11.1 V
10.8 V
Breakdown Voltage-Nom
12.4 V
12 V
Clamping Voltage-Max
18.8 V
17.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-J2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.38 W
3 W
Rep Pk Reverse Voltage-Max
10 V
9.72 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
J BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
94
2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JESD-609 Code
e3
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Compare SMBJ10C with alternatives
Compare P6SMB12CHR4 with alternatives