SMBJ10A
vs
SMBJ10AHR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
SYNSEMI INC
DIGITRON SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
11.7 V
11.7 V
Clamping Voltage-Max
17 V
17 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
YES
YES
Base Number Matches
1
1
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
12.3 V
Breakdown Voltage-Min
11.1 V
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Power Dissipation-Max
1.38 W
Reference Standard
MIL-19500
Reverse Current-Max
5 µA
Reverse Test Voltage
10 V
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
C BEND
Terminal Position
DUAL
Compare SMBJ10A with alternatives
Compare SMBJ10AHR with alternatives