SMBJ100HE3/5B vs SMBJ100M4G feature comparison

SMBJ100HE3/5B Vishay Semiconductors

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SMBJ100M4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-C2 SMB, 2 PIN
Pin Count 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 136 V 136 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 123.5 V 123.5 V
Clamping Voltage-Max 179 V 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN

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