SMBJ100C
vs
SMBJ100CM4
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL INSTRUMENT CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
Breakdown Voltage-Max
141 V
136 V
Breakdown Voltage-Min
111 V
111 V
Clamping Voltage-Max
179 V
179 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
49
1
Rohs Code
Package Description
R-PDSO-C2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
123.5 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
3 W
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMBJ100C with alternatives
Compare SMBJ100CM4 with alternatives