SMBJ100A-GT3
vs
SMBJ100AE3/TR13
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROCHIP TECHNOLOGY INC
Package Description
R-PDSO-C2
SMBJ, 2 PIN
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
128 V
123 V
Breakdown Voltage-Min
111 V
111 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max
100 V
100 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Factory Lead Time
16 Weeks
Additional Feature
TR, 7 INCH: 750
Breakdown Voltage-Nom
117 V
Clamping Voltage-Max
162 V
JESD-609 Code
e3
Power Dissipation-Max
1.38 W
Terminal Finish
Matte Tin (Sn)
Compare SMBJ100A-GT3 with alternatives
Compare SMBJ100AE3/TR13 with alternatives