SMBG58A vs MSPSMBJP6KE68ATR feature comparison

SMBG58A General Instrument Corp

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MSPSMBJP6KE68ATR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 74.1 V 71.4 V
Breakdown Voltage-Min 64.4 V 64.6 V
Clamping Voltage-Max 93.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 5 1
Pbfree Code No
Rohs Code No
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-214AA
JESD-609 Code e0
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 58.1 V
Terminal Finish TIN LEAD

Compare SMBG58A with alternatives

Compare MSPSMBJP6KE68ATR with alternatives