SMAJP4KE51AE3TR
vs
P6SMB62AHE3/52
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Part Package Code
DO-214AC
DO-214AA
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH; 750
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
53.6 V
65.1 V
Breakdown Voltage-Min
48.5 V
58.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.52 W
5 W
Rep Pk Reverse Voltage-Max
43.6 V
53 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
5
1
Pbfree Code
Breakdown Voltage-Nom
62 V
Case Connection
ISOLATED
Clamping Voltage-Max
85 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare SMAJP4KE51AE3TR with alternatives
Compare P6SMB62AHE3/52 with alternatives