SMAJP4KE110AE3 vs MVSMAJP4KE110A feature comparison

SMAJP4KE110AE3 Microsemi Corporation

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MVSMAJP4KE110A Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AC DO-214BA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 116 V 116 V
Breakdown Voltage-Min 105 V 105 V
Breakdown Voltage-Nom 110 V
Clamping Voltage-Max 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 94 V 94 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code No
JESD-609 Code e0
Moisture Sensitivity Level 1
Terminal Finish TIN LEAD

Compare SMAJP4KE110AE3 with alternatives

Compare MVSMAJP4KE110A with alternatives