SMAJ8.0
vs
SMAJ8.0AHE3/61
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
10.9 V
9.83 V
Breakdown Voltage-Min
8.89 V
8.89 V
Breakdown Voltage-Nom
9.9 V
9.36 V
Clamping Voltage-Max
15 V
13.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
45
2
Pbfree Code
Part Package Code
DO-214AC
Pin Count
2
JEDEC-95 Code
DO-214AC
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
Compare SMAJ8.0 with alternatives
Compare SMAJ8.0AHE3/61 with alternatives