SMAJ8.0 vs SMAJ8.0AHR3G feature comparison

SMAJ8.0 Diodes Incorporated

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SMAJ8.0AHR3G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 SMA, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.9 V 9.83 V
Breakdown Voltage-Min 8.89 V 8.89 V
Clamping Voltage-Max 15 V 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 14 2
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 9.36 V
JEDEC-95 Code DO-214AC
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

Compare SMAJ8.0 with alternatives

Compare SMAJ8.0AHR3G with alternatives