SMAJ78CE3G vs P4SMAJ78C feature comparison

SMAJ78CE3G Taiwan Semiconductor

Buy Now Datasheet

P4SMAJ78C Dean Technology

Buy Now Datasheet
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD DEAN TECHNOLOGY INC
Package Description R-PDSO-C2 SMA, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 106 V 109.8 V
Breakdown Voltage-Min 86.7 V 86.7 V
Breakdown Voltage-Nom 96.35 V 98.25 V
Clamping Voltage-Max 139 V 139 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 400 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 78 V 78 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 11
Reverse Current-Max 5 µA
Reverse Test Voltage 78 V

Compare SMAJ78CE3G with alternatives