SMAJ7.5HF3G vs SMAJ8.0A-Q feature comparison

SMAJ7.5HF3G Taiwan Semiconductor

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SMAJ8.0A-Q Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BOURNS INC
Package Description R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY PRSM-MIN
Breakdown Voltage-Max 10.3 V 9.83 V
Breakdown Voltage-Min 8.33 V 8.89 V
Breakdown Voltage-Nom 9.32 V 9.36 V
Clamping Voltage-Max 14.3 V 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101 AEC-Q101
Rep Pk Reverse Voltage-Max 7.5 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Factory Lead Time 24 Weeks
Samacsys Manufacturer Bourns
Reverse Current-Max 50 µA
Reverse Test Voltage 8 V

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Compare SMAJ8.0A-Q with alternatives