SMAJ7.0CAE2G vs SMAJ7.0CAE3/TR13 feature comparison

SMAJ7.0CAE2G Taiwan Semiconductor

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SMAJ7.0CAE3/TR13 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Package Description R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Category CO2 Kg 8.54 8.54
Compliance Temperature Grade Military: -55C to +150C Military: -55C to +150C
EU RoHS Version RoHS 2 (2015/863/EU) RoHS 2 (2011/65/EU)
EU RoHS Exemptions 7(a)
Candidate List Date 2020-01-16 2018-01-15
Conflict Mineral Status DRC Conflict Free DRC Conflict Free
Conflict Mineral Status Source CMRT V6.10 CMRT V5.10
Qualifications AEC-Q101
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.6 V 8.6 V
Breakdown Voltage-Min 7.78 V 7.78 V
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 7 V 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
Factory Lead Time 16 Weeks
Qualification Status Not Qualified

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