SMAJ6.0A vs SMAJ6.0AHF2G feature comparison

SMAJ6.0A DB Lectro Inc

Buy Now Datasheet

SMAJ6.0AHF2G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer DB LECTRO INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code unknown compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 7.37 V
Breakdown Voltage-Min 6.67 V 6.67 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 59 1
Rohs Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 7.02 V
Clamping Voltage-Max 10.3 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMAJ6.0A with alternatives

Compare SMAJ6.0AHF2G with alternatives