SMAJ58CAHF3 vs SMAJ60CA-H feature comparison

SMAJ58CAHF3 Taiwan Semiconductor

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SMAJ60CA-H Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BOURNS INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY PRSM-MIN
Breakdown Voltage-Max 71.2 V 73.7 V
Breakdown Voltage-Min 64.4 V 66.7 V
Breakdown Voltage-Nom 67.8 V 70.2 V
Clamping Voltage-Max 93.6 V 96.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard AEC-Q101 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 58 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Samacsys Manufacturer Bourns

Compare SMAJ58CAHF3 with alternatives

Compare SMAJ60CA-H with alternatives