SMAJ58A-T vs SMAJ58AHR3G feature comparison

SMAJ58A-T Rectron Semiconductor

Buy Now Datasheet

SMAJ58AHR3G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer RECTRON LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.2 V 71.2 V
Breakdown Voltage-Min 64.4 V 64.4 V
Breakdown Voltage-Nom 67.8 V 67.8 V
Clamping Voltage-Max 93.6 V 93.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2; UL LISTED AEC-Q101
Rep Pk Reverse Voltage-Max 58 V 58 V
Reverse Current-Max 1 µA
Reverse Test Voltage 58 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 1
Package Description SMA, 2 PIN
Samacsys Manufacturer Taiwan Semiconductor
Moisture Sensitivity Level 1

Compare SMAJ58AHR3G with alternatives