SMAJ58A vs SMAJ58AF3G feature comparison

SMAJ58A PRO-AN Electronic Co Ltd

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SMAJ58AF3G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer PRO-AN ELECTRONIC CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Category CO2 Kg 8.54 8.54
Base Number Matches 61 1
Rohs Code Yes
Package Description R-PDSO-C2
Compliance Temperature Grade Military: -55C to +150C
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2024-06-27
SVHC Over MCV 7439-92-1
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.40
Qualifications AEC-Q101
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.2 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 67.8 V
Clamping Voltage-Max 93.6 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 58 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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