SMAJ58A
vs
SMAJ58A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
THINKING ELECTRONIC INDUSTRIAL CO LTD
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Nom
67.8 V
67.8 V
Clamping Voltage-Max
93.6 V
93.6 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
58 V
58 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Rohs Code
Yes
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
71.2 V
Breakdown Voltage-Min
64.4 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Power Dissipation-Max
3.3 W
Reference Standard
MIL-STD-750
Reverse Current-Max
1 µA
Reverse Test Voltage
58 V
Technology
AVALANCHE
Terminal Finish
MATTE TIN