SMAJ51CAF3
vs
SMAFJ51C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
LESHAN RADIO CO LTD
Package Description
R-PDSO-C2
R-PDSO-F2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
62.7 V
62.7 V
Breakdown Voltage-Min
56.7 V
56.7 V
Breakdown Voltage-Nom
59.7 V
Clamping Voltage-Max
82.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-F2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
1
Compare SMAJ51CAF3 with alternatives
Compare SMAFJ51C with alternatives