SMAJ51CA vs MQSMAJP4KE62CAE3TR feature comparison

SMAJ51CA Galaxy Microelectronics

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MQSMAJP4KE62CAE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICROSEMI CORP
Part Package Code SMA DO-214AC
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 62.7 V 65.1 V
Breakdown Voltage-Min 56.7 V 58.9 V
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 51 V 53 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 53 1
Package Description R-PDSO-C2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare SMAJ51CA with alternatives

Compare MQSMAJP4KE62CAE3TR with alternatives