SMAJ51AE3/TR13
vs
SMAJ51AF2G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
Factory Lead Time
16 Weeks
Breakdown Voltage-Max
62.7 V
62.7 V
Breakdown Voltage-Min
56.7 V
56.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Package Description
R-PDSO-C2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom
59.7 V
Clamping Voltage-Max
82.4 V
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30
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