SMAJ45A
vs
PGSMAJ45AHR3G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
GOODWORK SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
52.65 V
52.65 V
Clamping Voltage-Max
72.7 V
72.7 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AC
DO-214AC
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
45 V
45 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
60
1
Rohs Code
Package Description
SMA, 2 PIN
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
55.3 V
Breakdown Voltage-Min
50 V
Configuration
SINGLE
Diode Element Material
SILICON
Forward Voltage-Max (VF)
3.5 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
400 W
Number of Elements
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101
Reverse Current-Max
1 µA
Reverse Test Voltage
45 V
Technology
AVALANCHE
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
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